Prof. David Wallis, holds a joint chair in Compound Semiconductors at the Universities of Cardiff and Cambridge. He has >25 years experience in the growth and characterisation of III-V semiconductor materials including both optical and electronic GaN based devices and has published more than 170 papers. For most of his career he has worked in industry. From 2006 to 2011 he was the technical lead for GaN growth at QinetiQ Plc and starting in 2012 he led the GaN on Si technology transfer from the University of Cambridge to Plessey’s Production facility in Plymouth, leading to the successful launch of Plessey’s first LED products in 2014. He currently holds an EPSRC Manufacturing Fellowship and is treasurer for the UK Nitrides Consortium.
Dr Menno Kappers is a senior member of the Cambridge Centre for GaN and has more than 20 years experience in the MOCVD growth of GaN structures. He was a member of the management committee of the Lighting the Future programme grant developing high brightness LEDs, and helps to lead the Cambridge contribution to the National Centre for III-V Epitaxy. He also leads projects including an industrial interaction with Laytec and Linkoping University in Sweden.
Dr Martin Frentrup – is a postdoctoral researcher at the Cambridge Centre for Gallium Nitride and has since 2008 experience in the growth and characterisation of GaN based semiconductors and optoelectronic devices. He worked in Germany, India, and UK on several national and international research projects on the growth and development of ultra-fast blue femtosecond laser diodes, and nitride materials with low electric fields for more efficient green lighting.
Dr Lata Sahonta – has been working with nitride semiconductors for over ten years and specialises in characterisation of III-V devices and materials. She has worked on numerous high-profile nitride research and development projects in the UK and abroad, and is the Programme Manager for Energy Materials at the University of Cambridge, promoting technology transfer, scale-up and manufacturing of energy-efficient epitaxial devices and systems.